By Topic

Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Shin, Mincheol ; Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3644959 

Rigorous quantum mechanical transport calculations based on the multi-band k · p Hamiltonian are performed in this work to show that the coupling of heavy and light holes (LHs) greatly reduces on-state hole current in ultra-scaled p-type Si nanowire FETs. If the coupling between the heavy and light holes is artificially suppressed, on-current of the p-type devices almost doubles and becomes comparable to that of n-type counterparts. It is found that the effect of the coupling on the hole transport is maximized at the channel width of around 5 nm.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 14 )