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Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

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7 Author(s)
Umeda, T. ; Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan ; Esaki, K. ; Kosugi, R. ; Fukuda, K.
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The microscopic behavior of nitrogen atoms in the SiO2-SiC interface regions of n-channel lateral 4 H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) was studied using low-temperature electrically detected magnetic resonance spectroscopy and other techniques. The results show that nitrogen atoms eliminated shallow interface states observable at 20 K and further diffused into the channel region of the MOSFETs as shallow donors. These two behaviors enable nitrogen atoms to change the channel conductivity of SiC MOSFETs.

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Applied Physics Letters  (Volume:99 ,  Issue: 14 )