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Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror

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6 Author(s)
Almuneau, G. ; Centre d''Electron. et de Microelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Genty, F. ; Chusseau, L. ; Bertru, N.
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The first high reflectivity (R=97.7%) Al0.3Ga0.7 As0.5Sb0.5/AlAs0.59Sb0.41 Bragg mirror lattice matched to InP was obtained at 1.28 μm by solid source molecular beam epitaxy. This result was achieved with only 15.5 periods in the stack. A comparison between the calculated and the measured Bragg mirror reflectivities shows a near perfect agreement

Published in:

Electronics Letters  (Volume:33 ,  Issue: 14 )