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Exploiting the Body of MOS Devices for High Performance Analog Design

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4 Author(s)
Monsurro, P. ; DIE (Dipt. di Ing. Elettron.), Univ. of Rome Sapienza, Rome, Italy ; Pennisi, S. ; Scotti, G. ; Trifiletti, A.

With the progressive reduction of MOS transistors minimum dimension and their associated supply voltages, the body terminal-considered in the past as an exclusive source of unwanted second order effects-has been advantageously exploited by digital designers and is also becoming an attractive opportunity for the implementation of high-performance analog integrated circuits. In this paper, we will discuss some techniques that can be applied to many conventional analog building blocks in order to improve their performance (such as gain and linearity) and/or decreasing their supply demand. Experimental prototypes have been implemented and tested, showing that the proposed techniques are promising candidates for enhanced analog IC design in nanoscale technologies.

Published in:
Circuits and Systems Magazine, IEEE  (Volume:11 ,  Issue: 4 )

Date of Publication: Fourthquarter 2011

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