Cart (Loading....) | Create Account
Close category search window
 

Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Huffaker, D.L. ; Microelectron. Res. Center, Texas Univ., Austin, TX ; Graham, L.A. ; Deppe, D.G.

Data are presented on vertical cavity surface emitting lasers that use an InGaAlAs quantum dot active region and oxide-confinement. Continuous-wave room temperature operation is achieved at a wavelength of 9510 Å with a threshold current of 235 μA for a 7 μm square oxide aperture. Electroluminescence from similar active regions without a cavity shows that lasing occurs on the three-dimensionally confined quantum dot electronic states

Published in:

Electronics Letters  (Volume:33 ,  Issue: 14 )

Date of Publication:

3 Jul 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.