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Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure

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9 Author(s)
O. Imafuji ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; M. Yuri ; T. Hashimoto ; M. Ishida
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High temperature operation at up to 90°C has been achieved in 65O nm-band AlGaInP visible laser diodes with a real refractive index guided self-aligned structure using an AlInP current blocking layer. The operating current is as low as 45 mA under CW operation at 60°C and the characteristic temperature is 120 K from 20 to 60°C

Published in:

Electronics Letters  (Volume:33 ,  Issue: 14 )