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The temperature-dependent characteristics of meta morphic high electron mobility transistors (MHEMTs) with double and single δ-doped structure are studied and demonstrated. Due to the use of double δ-doped sheets, the current density in the channel layer and two-dimensional electron gas could effectively be increased. The excellent turn-on voltage of 1.18 (0.80) V, max imum drain saturation current of 544 (524) mA/mm, maximum extrinsic transconductance of 361 (312) mS/mm, unity current gain cutoff frequency of 55.06 GHz, and maximum oscillation frequency of 129.17 GHz are obtained at 300 (510) K for a 0.6 × 100 μm2 gate dimension double δ-doped MHEMT. In addition, using wide-bandgap InAlAs Schottky, spacer, and buffer layers, the carrier confinement could significantly be improved at high temperature. Therefore, excellent thermal stability is achieved for double δ-doped MHEMT. The device with a double δ-doped structure exhibits a considerably low temperature coefficient on threshold voltage (∂Vth/∂T) of 0.06 mV/K when the temperature is increased from 330 to 510 K, which is superior to previous reports of related high electron mobility transistors.