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Optimization of Indirectly-Heated Type Microwave Power Sensors Based on GaAs Micromachining

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3 Author(s)
De Bo Wang ; Key Lab. of MEMS of the Minist. of Educaiton, Southeast Univ., Nanjing, China ; Xiao Ping Liao ; Tong Liu

In this paper, the indirectly-heated type microwave power sensors based on GaAs micromachining are optimized to obtain a reasonable microstructure dimension and achieve the compatibility of miniaturization with high performance. The thermal properties and the microwave properties of microwave power sensors are researched. The fabrication is divided into a front side and a back side processing of GaAs. The matching characteristics and the sensitivity characteristics of microwave power sensors are measured. With a tradeoff consideration between the miniaturization and the high performance, a reasonable microstructure dimension of the microwave power sensor is obtained. This optimized power sensor has very good RF-dc linearity, and the response time is about 6 ms.

Published in:

Sensors Journal, IEEE  (Volume:12 ,  Issue: 5 )