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In this paper, the indirectly-heated type microwave power sensors based on GaAs micromachining are optimized to obtain a reasonable microstructure dimension and achieve the compatibility of miniaturization with high performance. The thermal properties and the microwave properties of microwave power sensors are researched. The fabrication is divided into a front side and a back side processing of GaAs. The matching characteristics and the sensitivity characteristics of microwave power sensors are measured. With a tradeoff consideration between the miniaturization and the high performance, a reasonable microstructure dimension of the microwave power sensor is obtained. This optimized power sensor has very good RF-dc linearity, and the response time is about 6 ms.