By Topic

Performance comparison of standard and voltage controlled ring oscillator for UWB-IR pulse generator in 0.35µm and 0.18µm CMOS technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
B. S. Vuckovic ; ELSYS Eastern Europe, Omladinskih brigada 88b, Belgrade, Serbia ; J. B. Radic ; M. S. Damnjanovic ; M. S. Videnovic-Misic

A CMOS standard ring oscillators with 5 and 7 stages are examined in 0.35μm and 0.18μm technologies. For optimum number of ring oscillator stages (N = 5) the operating frequencies of 1.62 GHz and 3.07 GHz are obtained in 0.35μm and 0.18μm technologies, respectively. The 5-stage ring oscillator topology is further investigated while changing power supply and temperature. Their influence on oscillating frequency can be compensated by introducing additional voltage controlled cascade PMOS or/and NMOS transistors in one inverter stage. As ring oscillator is a part of UWB-IR (Ultra Wide Band Impulse Radio) pulse generator, its oscillating frequency determines the central frequency of the pulse spectrum and influence significantly spectrum fitting within UWB FCC mask.

Published in:

2011 IEEE 9th International Symposium on Intelligent Systems and Informatics

Date of Conference:

8-10 Sept. 2011