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Roughness influence in the barrier quality of ferroelectric/ferromagnetic tunnel junctions, model, and experiments

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1 Author(s)
Sirena, M. ; Centro Atómico Bariloche, Instituto Balseiro – CNEA & University Nac. de Cuyo, Av. Bustillo 9500, Bariloche, Rio Negro 8400, Argentina

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In this work, a phenomenological approach is proposed to analyze the electrical transport through an insulating barrier in insulating/metallic bilayer systems using conductive atomic force microscopy. The influence of the substrate in the electrical properties of ferroelectric/ferromagnetic bilayers was studied in the frame of this model. The substrate roughness was found to increase the barrier height distribution and increase the attenuation length in the material, reducing the barrier quality for the developing of multiferroic tunnel junctions.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 6 )

Date of Publication:

Sep 2011

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