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Gain and Fan-Out in a Current-Field Driven Spin Transistor With an Assisting AC Magnetic Field

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6 Author(s)
Konishi, K. ; Osaka Univ., Toyonaka, Japan ; Nozaki, T. ; Kubota, H. ; Fukushima, A.
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We investigated gain and fan-out in a current-field driven spin transistor that is driven by a current-induced magnetic field. The basic structure of the transistor consisted of a coplanar waveguide for magnetic field application and an MgO-based magnetic tunnel junction with high magnetoresistance and low resistance area product. Under an assisting ac magnetic field and a dc bias voltage of 0.4 V, we demonstrated substantial power gain of 130, current gain of 4.9, and a fan-out value of 5.7. The scaling of the fan-out value in this device is discussed in detail. The current-field driven spin transistor is proven to be a promising candidate as a basic component of a nonvolatile logic device.

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Magnetics, IEEE Transactions on  (Volume:48 ,  Issue: 3 )