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Ion implantation effects at SiO2/SiC and Al2O3/SiC interfaces have been investigated by implanting Ar ions at the interface of oxide and SiC. Capacitance-voltage relation and breakdown properties for these dielectrics are studied before and after implantation. The results indicate that the SiO2/SiC interface is sensitive to ion fluences higher than 1 × 1011 cm-2, while Al2O3 on SiC can sustain higher fluences. In addition, the breakdown of the Al2O3 is found to be less sensitive to the ion implantation.
Date of Publication: Dec. 2011