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Widely Tunable High-Power Semiconductor Disk Laser With Nonresonant AR-Assisted Gain Element on Diamond Heat Spreader

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5 Author(s)
Borgentun, C. ; Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden ; Hessenius, C. ; Bengtsson, J. ; Fallahi, M.
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We report on an optically pumped semiconductor disk laser with a wide wavelength tuning range and a high peak output power. This was achieved using a combination of efficient thermal management and a broadband gain element (GE) with carefully engineered spectral gain characteristics. For heat removal, a flip-chip bonding scheme on diamond was used. To provide high active mirror reflectance over a large wavelength region, the layered structure of the GE formed a nonresonant subcavity assisted by an antireflective structure. A peak output power of more than 7.5 W and a tuning range of 32 nm around the center wavelength of 995 nm were obtained.

Published in:

Photonics Journal, IEEE  (Volume:3 ,  Issue: 5 )