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Models for the local anodic oxidation of silicon using scanning tunneling microscopy and non-contact atomic force microscopy are implemented in a generic process simulator, using the Level Set method. The advantage of the presented implementation is the ease with which further processing steps can be simulated in the same environment. An empirical model for the width of the oxide when using scanning tunneling microscopy is also presented and implemented with the simulator. An oxide dot is simulated for both processes, with a height of 1nm and widths of 5.6nm and 85nm, respectively. The simulator allows for a Gaussian or Lorentzian profile for the final surface deformation.
Date of Conference: 8-11 May 2011