Referenced Items are not available for this document.
Models for the local anodic oxidation of silicon using scanning tunneling microscopy and non-contact atomic force microscopy are implemented in a generic process simulator, using the Level Set method. The advantage of the presented implementation is the ease with which further processing steps can be simulated in the same environment. An empirical model for the width of the oxide when using scanning tunneling microscopy is also presented and implemented with the simulator. An oxide dot is simulated for both processes, with a height of 1nm and widths of 5.6nm and 85nm, respectively. The simulator allows for a Gaussian or Lorentzian profile for the final surface deformation.
Published in:
Electrical and Computer Engineering (CCECE), 2011 24th Canadian Conference on
Date of Conference: 8-11 May 2011
- Page(s):
- 000695 - 000698
- ISSN :
- 0840-7789
- E-ISBN :
- 978-1-4244-9787-4
- Print ISBN:
- 978-1-4244-9788-1
- INSPEC Accession Number:
- 12404210
- Conference Location :
- Niagara Falls, ON
- Digital Object Identifier :
- 10.1109/CCECE.2011.6030543
- Product Type:
- Conference Publications
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