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A 15-dBm SiGe BiCMOS PA for 77-GHz Automotive Radar

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3 Author(s)
Giammello, V. ; Dipt. di Ing. Elettr., Elettron. e Inf., Univ. di Catania, Catania, Italy ; Ragonese, E. ; Palmisano, G.

This paper presents a 15-dBm power amplifier for 77-GHz automotive radar applications, which is fabricated in a 0.13-μm SiGe:C BiCMOS process featuring bipolar transistors with fT /fmax of 230/280 GHz. The circuit consists of a two-stage pseudodifferential cascode with fully integrated input/output matching networks. State-of-art performance is achieved with the proposed design algorithm and layout optimization. The amplifier demonstrates a figure-of-merit of 2500 achieving a 22.5-dB power gain and a power-added efficiency of 7.5% at 77 GHz, while drawing 130 mA from a 2.5-V voltage supply.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 11 )