By Topic

A 15-dBm SiGe BiCMOS PA for 77-GHz Automotive Radar

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Giammello, V. ; Dipt. di Ing. Elettr., Elettron. e Inf., Univ. di Catania, Catania, Italy ; Ragonese, E. ; Palmisano, G.

This paper presents a 15-dBm power amplifier for 77-GHz automotive radar applications, which is fabricated in a 0.13-μm SiGe:C BiCMOS process featuring bipolar transistors with fT /fmax of 230/280 GHz. The circuit consists of a two-stage pseudodifferential cascode with fully integrated input/output matching networks. State-of-art performance is achieved with the proposed design algorithm and layout optimization. The amplifier demonstrates a figure-of-merit of 2500 achieving a 22.5-dB power gain and a power-added efficiency of 7.5% at 77 GHz, while drawing 130 mA from a 2.5-V voltage supply.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 11 )