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10-Gb/s Error-Free Silicon Optical Modulator for Both TE and TM Polarized Light

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10 Author(s)
Rasigade, G. ; Inst. d''Electron. Fondamentale, Univ. Paris-Sud, Orsay, France ; Ziebell, M. ; Marris-Morini, D. ; Brimont, A.
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We report the first experimental demonstration of a silicon optical modulator based on a pipin diode integrated in a 50- μm radius ring resonator. Large modulation efficiency was obtained with a VπLπ product of 3 V· cm for both transverse-electric (TE) and transverse-magnetic (TM) input light. Insertion loss of the doped ring resonator was lower than 1 dB and 10-Gb/s operations was demonstrated with an extinction ratio of 5.9 dB for TE and of 5.3 dB for TM polarization. A bit-error rate (BER) lower than 10-9 was measured in both TE and TM polarizations, proving the potential application of the modulator in optical transmission systems.

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Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 23 )