Referenced Items are not available for this document.
The low-frequency (LF) noise in standard n-channel triple-gate bulk FinFETs with and without dynamic threshold operation is, for the first time, experimentally investigated in the linear and saturation regions. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in this type of noise. The LF noise characteristics indicate that the DTMOS FinFET devices can be a promising candidate for analog and RF applications.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
11
)
Date of Publication: Nov. 2011
- Page(s):
- 1597 - 1599
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12308624
- Digital Object Identifier :
- 10.1109/LED.2011.2166372
- Product Type:
- Journals & Magazines
- Date of Publication :
- 26 September 2011
- Date of Current Version :
- 24 October 2011
- Issue Date :
- Nov. 2011
- Sponsored by :
- IEEE Electron Devices Society
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