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The low-frequency (LF) noise in standard n-channel triple-gate bulk FinFETs with and without dynamic threshold operation is, for the first time, experimentally investigated in the linear and saturation regions. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in this type of noise. The LF noise characteristics indicate that the DTMOS FinFET devices can be a promising candidate for analog and RF applications.
Date of Publication: Nov. 2011