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Design, Fabrication, and Characterization of a 3-D CMOS Fluxgate Magnetometer

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4 Author(s)
Chih-Cheng Lu ; Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan ; Wen-Sheng Huang ; Yu-Ting Liu ; Jen-Tzong Jeng

A dual-core 3-D microfluxgate magnetometer fabricated by a simple and inexpensive fabrication process is described in this paper. The microfluxgate is able to operate along a nearly linear V-B relationship at the second harmonic frequency and features good characteristics of high sensitivity and low noise response. These characteristic results indicate a field-to-voltage transfer coefficient of 11 V/T measured at the second harmonic frequency, power consumption of 67.3 mW, and a field noise response less than 12 nT/√ Hz at 1 Hz. In brief, our proposed device not only enhances responsivity capability and linear V-B characteristics, but also is CMOS process compatible, which is considered both function-efficient and cost-effective.

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Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 10 )