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Low temperature preparation of fatigue free Bi4Ti3 O12 thin films by MOCVD and their electrical properties

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3 Author(s)
T. Kijima ; Functional Devices Lab., Sharp Corp., Chiba, Japan ; M. Nagata ; H. Matsunaga

We have investigated the low temperature MOCVD method to form Bi 4Ti3O12 thin films with suitable electrical properties for nonvolatile ferroelectric memory applications. An ultra thin double buffer layer (5nm-Bi4Ti3O12/5nm-TiO2) was used to control the crystallization and a fine grain structure of Bi4Ti3O12 at a low growth temperature was obtained. 100 nm-Bi4Ti3O12 thin films grown at 400°C showed an excellent smooth surface morphology and had good electrical properties, namely, remanent polarization, Pr=11 μC/cm2, coercive field, Ec=90 kV/cm and low leakage current, IL=7×10-9 A/cm2 at 3 V. Additionally, for the first time, fatigue free property was confirmed up to 1×1012 switching cycles. Furthermore, it was found that the Bi4Ti3O12 thin films with a bismuth rich composition showed the (117) preferred orientation and a very large Pr of 23 μC/cm2

Published in:

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on  (Volume:1 )

Date of Conference:

18-21 Aug 1996