By Topic

Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Long, B. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA ; Ordosgoitti, J. ; Jha, R. ; Melkonian, C.

This report presents the charge transport mechanisms in the virgin resistance state (VRS) and breakdown resistance state (BRS) of transition metal oxide memristor devices with tungsten (W) electrodes. The devices behaved as reconfigurable diodes up to ±3.2 V in VRS without the need of any intentional electroforming. The mechanism of conduction in VRS was observed to be governed by tunneling at low temperatures and Frenkel-Poole (F-P) conduction at high temperatures. The BRS was achieved by applying sweep voltages above ±3.2 V after which the device failed to reset. The mechanism of charge transport in BRS was governed by ohmic conduction through defect-assisted localized conduction channels. The barrier height for F-P conduction in VRS and activation energy of defects for ohmic conduction in BRS were experimentally measured.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 11 )