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Application of Post- \hbox {HfO}_{2} Fluorine Plasma Treatment for Improvement of \hbox {In}_{0.53}\hbox {Ga}_{0.47} \hbox {As} MOSFET Performance

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5 Author(s)
Yen-Ting Chen ; Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA ; Wang, Yanzhen ; Xue, Fei ; Zhou, Fei
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Notable improvements in the HfO2/In0.53 Ga0.47As gate stack have been achieved by a post- HfO2 fluorine plasma treatment, including excellent interface quality of low-equivalent-oxide-thickness HfO2 (1.4 nm) directly on In0.53Ga0.47As with no interface passivation layer, over five-times reduction in interface trap density from 2.8 × 1012 to 4.9 × 1011 cm-2·eV-1, improved subthreshold swing from 127 to 109 mV/dec, and reduced Id-Vg hysteresis in pulsed Id-Vg measurement. Consequently, improved electrical performances have been achieved in 29% higher effective channel mobility and 29% higher drive current.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 11 )

Date of Publication:

Nov. 2011

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