Referenced Items are not available for this document.
We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10-4 Ω cm2. After annealing at 250°C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6- 3.9 × 10-4 Ω cm2. The laser-annealed samples remain electrically stable up to 60 min at 300°C. Laser-annealing causes the formation of interfacial TiN/β -AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.
Published in:
Photonics Technology Letters, IEEE
(Volume:23
,
Issue:
23
)
Date of Publication: Dec.1, 2011
- Page(s):
- 1784 - 1786
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 12332054
- Digital Object Identifier :
- 10.1109/LPT.2011.2169399
- Product Type:
- Journals & Magazines
- Date of Publication :
- 23 September 2011
- Date of Current Version :
- 07 November 2011
- Issue Date :
- Dec.1, 2011
- Sponsored by :
- IEEE Photonics Society
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