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Emission Efficiency Dependence on the p-GaN Thickness in a High-Indium InGaN/GaN Quantum-Well Light-Emitting Diode

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10 Author(s)
Che-Hao Liao ; Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan ; Chih-Yen Chen ; Horng-Shyang Chen ; Kuang-Yu Chen
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The dependencies of quantum-well (QW) internal quantum efficiency (IQE) and device behaviors on the p-layer thickness in a high-indium InGaN/GaN QW light-emitting diode (LED) are demonstrated. During the high-temperature growths of the p-AlGaN and p-GaN layers, the QWs are thermally annealed to increase their IQEs and blue-shift the emission with increasing p-layer thickness. Meanwhile, the quantum-confined Stark effect is enhanced with increasing p-layer thickness to decrease the IQEs and red-shift the emission. Based on the counteraction between the two effects, the maximum IQE and the shortest emission wavelength are observed in a sample with an optimized p-layer thickness, which includes a p-AlGaN layer of 20 nm and a p-GaN layer of 60 nm in thickness under our growth conditions. The fabricated LEDs of different p-GaN thicknesses show the similar variation trends in emission efficiency and wavelength.

Published in:

IEEE Photonics Technology Letters  (Volume:23 ,  Issue: 23 )