Skip to Main Content
We report the integration of GalnAsSb p-i-n photo diodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 μA at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 μm. This yields 1.63 × 109 cmHz1/2/W of Johnson-noise-limited-detectivity.