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Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

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6 Author(s)
Hattasan, N. ; INTEC-Dept., Ghent Univ. - IMEC, Ghent, Belgium ; Gassenq, A. ; Cerutti, L. ; Rodriguez, J.-B.
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We report the integration of GalnAsSb p-i-n photo diodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 μA at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 μm. This yields 1.63 × 109 cmHz1/2/W of Johnson-noise-limited-detectivity.

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 23 )