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W -Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS

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4 Author(s)
Cetinoneri, B. ; Electr. & Comput. Eng. Dept., Univ. of California San Diego, La Jolla, CA, USA ; Atesal, Y.A. ; Fung, A. ; Rebeiz, G.M.

This paper presents low-noise -band amplifiers and milliwatt-level 170-200-GHz output doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology. The transistors are modeled using R/C extraction and full electromagnetic modeling. The measured of a 30 1- transistor is 200-210 GHz at a bias current of 0.3-0.5 . A three-stage -band amplifier shows a record noise figure of 6.0 dB and a saturated output power of 7.5-8.0 dBm with a power-added efficiency of 9%, all at 95 GHz. The -band balanced doubler results in an output power of 1 mW at 180 GHz. A -band amplifier/ -band doubler chip is also demonstrated, with a peak output power of 0.5-1 mW at 170-195 GHz and a conversion gain from to . This paper shows that 45-nm SOI CMOS, built for digital and mixed-signal applications, results in state-of-the-art performance at - and -band.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 3 )

Date of Publication:

March 2012

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