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Bistable optically controlled semiconductor switches in a frequency-agile RF source

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3 Author(s)
Stoudt, David C. ; Pulsed Power Syst. & Technol. Group, Naval Surface Warfare Center, Dahlgren, VA, USA ; Richardson, M.A. ; Peterkin, F.E.

The processes of persistent photoconductivity followed by photoquenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a photoconductive switch to be developed that can be closed by the application of one laser pulse (λ=1.06 μm) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser (λ=2.13 μm). This switch is called the bistable optically controlled semiconductor switch (BOSS). The opening phase of the BOSS requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (~1 MeV). Neutron-irradiated BOSS devices have been opened against a rising average electric field of about 36 kV/cm (18 kV) in a time less than 1 ns while operating at a repetition rate, within a two-pulse burst, of about 1 GHz. The ability to modify the frequency content of the electrical pulses, by varying the time separation, is demonstrated. Results demonstrating the operation of two BOSS devices imbedded in a frequency-agile RF source configuration are also discussed

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Plasma Science, IEEE Transactions on  (Volume:25 ,  Issue: 2 )