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Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate Insulator

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3 Author(s)
Min Liao ; Dept. of Electron. & Appl. Phys., Tokyo Inst. of Technol., Yokohama, Japan ; Ishiwara, Hiroshi ; Ohmi, S.

Low-voltage operating pentacene-based organic field-effect transistors (OFETs) with a HfON gate insulator have been fabricated with a fully room-temperature process. Despite its thin capacitance equivalent thickness of 3.3 nm, the room-temperature-processed HfON gate insulator shows a low leakage current density of 7 × 10-7 A/cm2 at a gate voltage of -2 V. Moreover, the fully room-temperature-fabricated OFET (channel W/L = 1650/100 μm) shows a low subthreshold swing of 0.12 V/decade, a large on/off-current ratio of 6.8 × 104, a threshold voltage of -0.5 V, and a hole mobility of 0.25 cm2/V·s at an operating voltage of -2 V.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 11 )

Date of Publication:

Nov. 2011

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