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Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors With InSb-Like and Mixed Interfaces

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7 Author(s)
Yanhua Zhang ; Lab. of Nano-Optoelectron., Inst. of Semicond., Beijing, China ; Wenquan Ma ; Yulian Cao ; Huang, Jianliang
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We report on long wavelength infrared photodetectors using InAs/GaSb superlattices (SLs) with InSb-like and mixed interfaces (IFs). X-ray diffraction (XRD) measurements indicate that the SLs with mixed IFs have a narrower linewidth. The full-width at half-maximum of the XRD satellite peak is 24 arcsec for the sample with InSb-like IFs and is only 17 arcsec for the sample with mixed IFs. However, in terms of infrared photodetection, InSb-like IFs are superior to the mixed ones. Stronger photoluminescence and photoresponse signals are observed for the sample with InSb-like IFs.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 12 )

Date of Publication:

Dec. 2011

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