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Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors

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5 Author(s)
Bin Zhou ; Key Laboratory for Micro–Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha, China ; Jia Sun ; Xiao Han ; Jie Jiang
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Solution-processed solid chitosan-based proton conductor film shows a large specific gate capacitance of ~7.47 μF/cm2 due to the interfacial electric-double-layer effect. Low-voltage (1.5 V) organic/inorganic hybrid transparent thin-film transistors with patterned indium-tin-oxide channels gated by chitosan films are self-assembled on glass substrates by only one metal shadow mask. The subthreshold gate voltage swing, current on/off ratio, and field-effect mobility are estimated to be 93 mV/dec, ~106, and 5.74 cm2·V-1·s-1, respectively. The reproducibility of pulse respond of such device is also demonstrated, which indicates the absence of electrochemical doping of the channel at the interface.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 11 )