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III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

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4 Author(s)
Gu, J. J. ; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA ; Koybasi, O. ; Wu, Y. Q. ; Ye, P. D.

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III-V-on-nothing (III-VON) metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally demonstrated with In0.53Ga0.47As as channel and atomic layer deposited Al2O3 as gate dielectric. A hydrochloric acid based release process has been developed to create an air gap beneath the InGaAs channel layer, forming the nanowire channel with width down to 40 nm. III-VON MOSFETs with channel lengths down to 50 nm are fabricated and show promising improvement in drain-induced barrier lowering, due to suppressed short-channel effects. The top-down processing technique provides a viable pathway towards fully gate-all-around III-V MOSFETs.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 11 )