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Electronic properties of vacancy related defects in ZnO induced by mechanical polishing

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4 Author(s)
Quemener, V. ; University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, N-0316 Oslo, Norway ; Vines, L. ; Monakhov, E. V. ; Svensson, B. G.

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Electronic properties of defects induced by mechanical polishing in hydrothermally grown n-type ZnO have been investigated by capacitance versus voltage measurements and deep level transient spectroscopy (DLTS). The DLTS measurements have been performed in the temperature range 80-600 K enabling exploration of deep-level states in the vicinity of the middle of the energy bandgap. The results show that mechanical polishing forms defects in the near surface region which strongly compensate and/or passivate the dominant shallow donors. Two pronounced polishing-induced defects are revealed with energy level positions around 1.0 eV and 1.2 eV below the conduction band edge. These levels are assigned to vacancy-related defect centers and substantially reduced in strength by post-polishing etching in diluted hydrofluoric acid.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 11 )