We present our development of n-type nano-structured hydrogenated silicon oxide (nc-SiOx:H) as a dual-function layer in multi-junction solar cells. We optimized nc-SiOx:H and attained a conductivity suitable for a doped layer and optical property suitable for an inter-reflection layer. We tested the effectiveness of the dual-function nc-SiOx:H layer by replacing the normal n layer between the middle and the bottom cells in an a-Si:H/a-SiGe:H/nc-Si:H triple-junction structure. A significant gain in the middle cell current density of ∼1.0 mA/cm2 is achieved. We further optimized the component cells and the triple-junction structures and attained an initial active-area cell efficiency of 16.3%.