Cart (Loading....) | Create Account
Close category search window
 

Performance study of 1 bit static RAM based on process technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Tumiran, N. ; Dept. of Electr. & Electron. Eng., Univ. Teknol. PETRONAS, Tronoh, Malaysia ; Awan, M.

A basic memory cell of SRAM topology consists of four transistors which act as a flip flop and two more transistors will act as pass transistor. In this study, experiment is done by varying the values of different variables that can affect the performance of basic memory cell. Among the variables are magnitudes of voltage supply, temperature, clock frequency and process technology used in fabrication of memory cell. These variables will have their own limit due to the configuration of circuit and properties transistor parameters in the memory cell. These values will determine the performance of the memory cell. The studies are carried out using various process technologies by simulation at schematic level. The results show that higher clock frequency will require higher value of supplied voltage. Lower supplied voltage will make SRAM failed to operate at high temperature. Different process technology will also influence value for minimum supplied voltage used and range temperature that the SRAM circuit can operate properly. The process technology of hp14tb has the minimum supply voltage of 0.83 V at 5 MHz while ami16 has the widest effective range temperature from -229°C to 224°C at 100MHz and 1.3 V simulation.

Published in:

Electrical Engineering and Informatics (ICEEI), 2011 International Conference on

Date of Conference:

17-19 July 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.