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Electrical Characteristics of Ultrathin Atomic Layer Deposited \hbox {TiO}_{2} and  \hbox {Al}_{2}\hbox {O}_{3}/\hbox {TiO}_{2} Stacked Dielectrics on (\hbox {NH}_{4})_{2}\hbox {S}_{x} -Treated InP

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3 Author(s)
Ming-Kwei Lee ; Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Yen, Chih-Feng ; Sheng-Hsiung Yang

Amorphous TiO2 film of 5 nm prepared by atomic layer deposition (ALD) on ammonium-sulfide-treated p-type InP shows good interface but slightly higher leakage current mainly from thermionic emission. With a high-bandgap amorphous Al2O3 of 3 nm prepared also by ALD on TiO2, the leakage currents are improved to 3.1 × 10-9 and 3.3 × 10-7 A/cm2 at ±2.5 MV/cm. The dielectric constant is about 17.8. The lowest interface state density is around 6.7 × 1011 cm-2 eV-1.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 11 )

Date of Publication:

Nov. 2011

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