Skip to Main Content
Amorphous TiO2 film of 5 nm prepared by atomic layer deposition (ALD) on ammonium-sulfide-treated p-type InP shows good interface but slightly higher leakage current mainly from thermionic emission. With a high-bandgap amorphous Al2O3 of 3 nm prepared also by ALD on TiO2, the leakage currents are improved to 3.1 × 10-9 and 3.3 × 10-7 A/cm2 at ±2.5 MV/cm. The dielectric constant is about 17.8. The lowest interface state density is around 6.7 × 1011 cm-2 eV-1.