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A Cost-Effective \hbox {Ni/Nb}_{2}\hbox {O}_{5}\hbox {/} \hbox {Al}_{2}\hbox {O}_{3}\hbox {/}\hbox {Ni}_{2}\hbox {Si} Metal–Insulator–Metal Capacitor Processed at 300 ^{\circ}\hbox {C} Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

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3 Author(s)
Jung-Hsiang Lee ; Dept. of Electron. Eng., Ching Yun Univ., Zhongli, Taiwan ; Yi-Chang Lin ; Ming-Yu Chen

Without requiring noble metal electrodes and expensive dielectric materials, a low-cost Ni/Nb2O5/Al2O3/ Ni2Si metal-insulator-metal (MIM) capacitor processed at 300°C has been developed using laser annealing and a nickel fully silicided (Ni-FUSI) amorphous silicon bottom electrode. A high capacitance density of 31 fF/μm2, along with low electrode resistivities, was achieved. At 25°C, this MIM capacitor also displays a good leakage current density of 3.3 × 10-7 A/cm2 at 1 V. From X-ray diffraction measurement results, the dielectric constants of Nb2O5 have been enhanced by KrF excimer laser annealing with different energy values due to hexagonal or orthorhombic phase formations that increase capacitance densities. Predicted 10-year ΔC/C of 0.8% is achieved at 1-V operation. The time-dependent dielectric breakdown (TDDB) characteristics also meet the 10-year lifetime criteria within the operation voltage range. Both the ΔC/C-V and TDDB characteristics have tradeoff relationships with the capacitance value. The combination of the improved Nb2O5 dielectric by laser annealing, an inserted Al2O3 layer, a high-work-function Ni top electrode, and the low-resistivity Ni2Si-FUSI bottom electrode leads to excellent device integrity.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 11 )

Date of Publication:

Nov. 2011

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