A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

Without requiring noble metal electrodes and expensive dielectric materials, a low-cost Ni/Nb
₂
O
₅
/Al
₂
O
₃
/ Ni
₂
Si metal-insulator-metal (MIM) capacitor processed at 300°C has been developed using laser annealing and a nickel fully silicided (Ni-FUSI) amorphous silicon bottom electrode. A high capacitance density of 31 fF/μm
²
, along with low electrode resistivities, was achieved. At 25°C, this MIM capacitor also displays a good leakage current density of 3.3 × 10
^-7
A/cm
²
at 1 V. From X-ray diffraction measurement results, the dielectric constants of Nb
₂
O
₅
have been enhanced by KrF excimer laser annealing with different energy values due to hexagonal or orthorhombic phase formations that increase capacitance densities. Predicted 10-year ΔC/C of 0.8% is achieved at 1-V operation. The time-dependent dielectric breakdown (TDDB) characteristics also meet the 10-year lifetime criteria within the operation voltage range. Both the ΔC/C-V and TDDB characteristics have tradeoff relationships with the capacitance value. The combination of the improved Nb
₂
O
₅
dielectric by laser annealing, an inserted Al
₂
O
₃
layer, a high-work-function Ni top electrode, and the low-resistivity Ni
₂
Si-FUSI bottom electrode leads to excellent device integrity.