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Field emission properties of diamond thin films

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3 Author(s)
Bakhtizin, R.Z. ; Dept of Phys. Electron., Bashkir State Univ., Ufa, Russia ; Yamaguzing, Yu.M. ; Pshenichnyuk, S.A.

Summary form only given, as follows. Si tips coated with thin diamond films show considerable promise for use in field emission cathodes because these films demonstrate an air-stable negative electron affinity surface. Such a surface may allow for fields emission at low electric field under poor vacuum conditions. In this work, a new technique for preparation of high quality diamond films with low impurity contamination has been developed. This technique is based on deposition of low energy C+ ions. These ions have been generated in duoplasmatron and directed to the Si tip via the beam forming system and mass-separation with Wien's filter. A study aimed an understanding the electronic properties of diamond adsorbed on the Si surface has been carried out by means of probe-hole I-V characteristics measurements and field emission electron spectroscopy as well. The paper reports on recent findings to emerge from the above study, and presents a pertinent model to explain the significant changes in energy spectra of field emitted electrons. Finally, we discuss the possible mechanism of electron transport in such a system

Published in:

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Date of Conference:

7-12 Jul 1996