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Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

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7 Author(s)
Eliza, S.A. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA ; Lee, I. ; Tulip, F.S. ; Mostafa, S.
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In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale ( ~ 6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

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NanoBioscience, IEEE Transactions on  (Volume:10 ,  Issue: 3 )