By Topic

Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Horng-Chih Lin ; Dept. of Electron. Eng. & the Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Lin, Zer-Ming ; Wei-Chen Chen ; Tiao-Yuan Huang

This paper investigates the read operation of poly-Si nanowire silicon-oxide-nitride-oxide-silicon devices with independent double-gate (IDG) configuration. The device features oxide-nitride-oxide (ONO) stack as the charge storage medium in one of the two gated sides with pure oxide in the other. Owing to the IDG feature, the shift in the device's transfer characteristics due to a change in the amount of storage charges can be sensed with two different modes, which have one of the two gates applied with a sweeping bias (driving gate) and the other with a fixed bias (control gate). Our analysis and experimental data show that a larger memory window is obtained when the gate of the ONO side is used as the driving gate. Moreover, the memory window of this mode is essentially independent of the bias applied to the control gate. Based on this finding, a novel Flash structure featuring IDG cells with a common control gate is proposed.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 11 )