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An improved method to study the long term discharge current through the dielectric film in microelectromechanical system capacitive switches is presented. The method allows the detection of currents in the sub-fempto-Ampere range by monitoring the decay of the bias for minimum capacitance in the pull-up state. The method has been applied for time interval in excess of 10 000 s. Finally, it is shown that in carefully designed devices the method allows the calculation of the current that arises from the charge fluctuation decay.