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NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices

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7 Author(s)
Shayesteh, M. ; Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland ; Daunt, C.L.L.M. ; O'Connell, D. ; Djara, V.
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In this paper, the contact resistivity of NiGe on n-doped Ge is extracted. Although phosphorus is the slowest n-type dopant in terms of diffusion in Ge, the corresponding contact resistivity data for this dopant are sparse. Contact resistivity dependence on implant dose will be determined, as well as a comparison of phosphorus- and arsenic-doped Ge layers. The impact of high contact resistance is evaluated for future technology n-type metal-oxide-semiconductor germanium devices.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 11 )

Date of Publication:

Nov. 2011

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