A self-biased ring oscillator with quadrature outputs operating at 600 MHz in a 130 nm CMOS technology

This paper presents a self-biased ring oscillator with quadrature outputs operating at 600 MHz. The proposed self-biased circuit presents low frequency oscillation sensitivity towards power supply and process variations, and simulations in a 130 nm CMOS technology, showing that the self-biased circuit achieves better results, what concerns phase noise and power dissipation, achieving 8 dB improvement in the FOM, when compared with the conventional ring oscillator based on current-starved inverters.