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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

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7 Author(s)
Johansson, S. ; Solid State Phys., Lund Univ., Lund, Sweden ; Egard, M. ; Ghalamestani, S.G. ; Borg, B.M.
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We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO2 high-k gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 10 )