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A novel thin film transistor for high voltage circuitry on glass

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5 Author(s)
F. J. Clough ; Emerging Technols. Res. Centre, DeMontfort Univ., Leicester, UK ; Y. Chen ; E. M. S. Narayanan ; W. Eccleston
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This paper describes the operation and performance of a novel polysilicon high voltage thin film transistor (HVTFT) structure incorporating a Semi-Insulating (SI) field plate (SI HVTFT). Experimental data confirms that the semi-insulating layer reduces the on state current-pinching effect resulting in improved current drivability. In the off state the semi-insulating layer helps to reshape the potential distribution within the device offset region resulting in a high blocking capability. The 2-D numerical simulator MEDICI is used to gain an insight into the impact of the SI layer on device operation

Published in:

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Date of Conference:

26-29 May 1997