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A novel 30 V p-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage

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5 Author(s)
A. Narazaki ; Fukuryo Semicon. Eng. Group, Mitsubishi Electr. Corp., Fukuoka, Japan ; Y. Hisamoto ; C. Tadokoro ; M. Takeda
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This paper reports an ultra low on-state-resistance p-channel power MOSFET without deterioration of the gate breakdown voltage. This p-channel MOSFET has a trench gate structure and an optimized channel structure. These effects make the channel resistance small without thinning of the gate oxide thickness, therefore it is possible for the total chip resistance to be reduced. As a result at BVDSS=42 V, this p-ch MOSFET exhibits an active area specific on-resistance RDS(on) A=1.5 mΩcm2 (at VGS-Vth=2 V), 1.8 mΩcm2 (at VGS-Vth=1.5 V), it remains 20 V of the maximum voltage applicable between gate and source

Published in:

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Date of Conference:

26-29 May 1997