Cart (Loading....) | Create Account
Close category search window
 

Electrical characteristics of a novel gate structure 4H-SiC power static induction transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Iwasaki, T. ; Tech. Res. Center, Hitachi Ltd., Ibaraki, Japan ; Oono, T. ; Asano, K. ; Sugawara, Y.
more authors

A power SIT with a novel gate structure was conceived, in which high blocking gain and low on-state voltage have been simultaneously achieved and the characteristics of silicon carbide (SiC) have been effectively employed. Simulation studies on characteristics of the SIT have been conducted. When a forward bias that was less than the built-in voltage was applied to the gate, the on-state voltage dropped to 0.25 V (at 200 A/cm2) and the gate reverse voltage required for blocking was 10 V for a SIT with a withstand voltage of 700 V. The on-state voltage dropped to 3.1 V (at 100 A/cm2) and the gate reverse bias required for blocking was 80 V for a SIT with a withstand voltage of 5,000 V

Published in:

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Date of Conference:

26-29 May 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.