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Electrical characteristics of a novel gate structure 4H-SiC power static induction transistor

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5 Author(s)
Iwasaki, T. ; Tech. Res. Center, Hitachi Ltd., Ibaraki, Japan ; Oono, T. ; Asano, K. ; Sugawara, Y.
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A power SIT with a novel gate structure was conceived, in which high blocking gain and low on-state voltage have been simultaneously achieved and the characteristics of silicon carbide (SiC) have been effectively employed. Simulation studies on characteristics of the SIT have been conducted. When a forward bias that was less than the built-in voltage was applied to the gate, the on-state voltage dropped to 0.25 V (at 200 A/cm2) and the gate reverse voltage required for blocking was 10 V for a SIT with a withstand voltage of 700 V. The on-state voltage dropped to 3.1 V (at 100 A/cm2) and the gate reverse bias required for blocking was 80 V for a SIT with a withstand voltage of 5,000 V

Published in:

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Date of Conference:

26-29 May 1997

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