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Syntheses of (Pb-Sn-Ti)O3 thin films by PLD method and their structural and ferroelectric properties

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6 Author(s)
J. Iwasaki ; Department of Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, Japan ; Y. Uesu ; H. Yokota ; P. E. Janolin
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(Pb-Sn-Ti)O3 (PST) thin films are fabricated by the pulse laser deposition method with three ceramic targets of PbO, SnO and TiO2 with consecutive sequences of deposition. Lattice parameters of PST thin film are a=b=0.3993 nm, c=0.4048 nm. This fact together with TEM-EDX results suggests that PST films are the mixed state of PbTiO3-SnTiO3-PbSnO3. Real part of dielectric constant and remanent polarization are determined to be about 1000 and 35 μC/cm2 at room temperature, respectively. X-ray diffraction reveals that a structural phase transition takes place at 600 °C. Piezoelectric response is confirmed by a piezo-force scanning microscope.

Published in:

2011 International Symposium on Applications of Ferroelectrics (ISAF/PFM) and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials

Date of Conference:

24-27 July 2011