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25Pb(In1/2Nb1/2)O3-45Pb(Mg1/3Nb2/3)O3 -30PbTiO3 (PIN-PMN-PT) ingots with the dimensions of Ø55×130mm were successfully grown by vertical Bridgman technique. The as-grown PIN-PMN-PT crystals were oriented and characterized on (001) cuts. Variation of di-/piezoelectric properties of the as-grown PIN-PMN-PT crystals near morphotropic phase boundary (MPB) along the growth direction were investigated. Temperature dependence of dielectric permittivity advised 60~135°C of rhombohedral to tetragonal phase transition temperature (Trt) and 120~210°C of Curie temperature (Tc) near MPB along the growth direction. PIN-PMN-PT crystals have coercive fields (Ec) of about 4.35kV/cm, more than twice that of Pb(Mg1/3Nb2/3)O3-32PbTiO3 (PMN-PT) and about 1% electric field strain. Tc was found to increase linearly along the growth direction and Trt gradually decreased in the middle part of the ingot. The piezoelectric constant, d33, increased initially then kept around 2000pC/N at lower but near MPB and the dielectric constant, εr, had the same trend with d33 falling into the scope of 5000-6300.
Date of Conference: 24-27 July 2011