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High-quality nano spin-oxide for possible applications in metal??oxide semiconductor field-effect transistor

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4 Author(s)
Wen-Tse Chang ; Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Yuanlin, Taiwan ; Gwo-Huei Yang ; Jun-Dar Hwang ; Jun-Hung Lin

Nano silicon dioxide (SiO2) has been deposited on silicon substrate using spin-coating method and Al/nano-SiO2/n-Si metal-oxide semiconductor (MOS) capacitors have been fabricated to characterise their electrical properties using current-voltage (I-V) and capacitance-voltage (C-V) measurements. Field-emission scanning electron microscope shows the spin-oxide with grain size ranging 50-60-nm. For as-formed spin-oxide, a large leakage current density of 5.14 × 10-5 cm-2 under 5 MV/cm field and fixed oxide charge density of 3.9 × 1012 cm-2 are obtained. After annealing at 500°C in N2 environment for 30 min, the leakage current and fixed oxide charge density are drastically reduced to 4.3 × 10-10 A/cm2 and 9 × 1011 cm-2, respectively. Such a large improvement, by five orders, in leakage current density demonstrates that the prepared nano spin-oxide exhibits a potential application in fabricating high-quality MOS field-effect transistor.

Published in:

Micro & Nano Letters, IET  (Volume:6 ,  Issue: 8 )