Cart (Loading....) | Create Account
Close category search window
 

Realisation of radio frequency microelectromechanical devices for multiband, tunable circuit applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Heves, E. ; Fac. of Eng. & Natural Sci., Sabanci Univ., Istanbul, Turkey ; Gurbuz, Y.

In this work a microelectromechanical-based parallel plate variable capacitor, a micromachined-inductor and an LC resonator that is formed by combining these two are presented. The parallel plate variable capacitor has curvature due to compressive stress and this allows the theoretical 50% tuning range to be exceeded. By changing the tuning voltage from 0 to 55 V, the varactor can achieve capacitance values from 90 to 260 fF. Additionally, inductors are designed and fabricated using the same process steps. Inductance values of 1.5 to 2 nH and quality factors from 5 to 10 are achieved. An inductor and variable capacitor are combined to form an LC resonator whose centre frequency changes from 8.194 to 6.192 GHz with applied voltages from 0 to 30 V.

Published in:

Microwaves, Antennas & Propagation, IET  (Volume:5 ,  Issue: 11 )

Date of Publication:

August 19 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.